FQA24N60

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-3P-3, SC-65-3
Transistor: unipolar, N-MOSFET; 600V; 23.5A; 310W; TO3P
Date Sheet

在庫數 20

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：9 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Number of Pins：3
Weight：6.401g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：23.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：310W Tc
Turn Off Delay Time：200 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2000
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：600V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：23.5A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：310W
Turn On Delay Time：90 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：240m Ω @ 11.8A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：5500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：145nC @ 10V
Rise Time：270ns
Vgs (Max)：±30V
Fall Time (Typ)：170 ns
Continuous Drain Current (ID)：23.5A
Threshold Voltage：5V
Gate to Source Voltage (Vgs)：30V
Drain-source On Resistance-Max：0.24Ohm
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：94A
Height：18.9mm
Length：15.8mm
Width：5mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20

小計金額 $0.00000

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FQA24N60