STB13NM60N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 650V 11A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 68

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：26 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：11A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：30 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ II
JESD-609 Code：e3
Part Status：NRND (Last Updated: 7 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：360mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB13N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Turn On Delay Time：3 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：360m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：790pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Rise Time：8ns
Drain to Source Voltage (Vdss)：600V
Vgs (Max)：±25V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：11A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Pulsed Drain Current-Max (IDM)：44A
DS Breakdown Voltage-Min：600V
Avalanche Energy Rating (Eas)：200 mJ
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 68

小計金額 $0.00000

類似スペック製品

STB13NM60N STMicroelectronics
見積かごへ在庫數 68
STB16N65M5 STMicroelectronics
見積かごへ在庫數 707
STB18N60M2 STMicroelectronics
見積かごへ在庫數 1000
STB12NM60N STMicroelectronics
見積かごへ在庫數 731

Phone

STB13NM60N