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FDD8880
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 30V 58A DPAK
Date Sheet
在庫數 1899
- 1+: $1.03188
- 10+: $0.97347
- 100+: $0.91837
- 500+: $0.86638
- 1000+: $0.81734
小計金額 $1.03188
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:10 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:13A Ta 58A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):55W Tc
- Turn Off Delay Time:38 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2004
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:9MOhm
- Voltage - Rated DC:30V
- Terminal Form:GULL WING
- Current Rating:58A
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:55W
- Case Connection:DRAIN
- Turn On Delay Time:8 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:9m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1260pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V
- Rise Time:91ns
- Vgs (Max):±20V
- Fall Time (Typ):32 ns
- Continuous Drain Current (ID):58A
- Threshold Voltage:2.5V
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:30V
- Height:2.39mm
- Length:6.73mm
- Width:6.22mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 1899
- 1+: $1.03188
- 10+: $0.97347
- 100+: $0.91837
- 500+: $0.86638
- 1000+: $0.81734
小計金額 $1.03188
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