画像はあくまで参考です。
STD8NF25
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 250V 8A Automotive 3-Pin(2 Tab) DPAK T/R
Date Sheet
在庫數 1980
- 1+: $1.14313
- 10+: $1.07843
- 100+: $1.01738
- 500+: $0.95980
- 1000+: $0.90547
小計金額 $1.14313
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:8A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):72W Tc
- Turn Off Delay Time:26 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:STripFET™ II
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:420MOhm
- Terminal Finish:Matte Tin (Sn) - annealed
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Base Part Number:STD8N
- JESD-30 Code:R-PSSO-G2
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:72W
- Case Connection:DRAIN
- Turn On Delay Time:13 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:420m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:500pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
- Rise Time:10ns
- Vgs (Max):±20V
- Fall Time (Typ):6 ns
- Continuous Drain Current (ID):8A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):8A
- Drain to Source Breakdown Voltage:250V
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 1980
- 1+: $1.14313
- 10+: $1.07843
- 100+: $1.01738
- 500+: $0.95980
- 1000+: $0.90547
小計金額 $1.14313
類似スペック製品













