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FDMT800100DC
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerVDFN
- MOSFET N-CH 100V 24A
Date Sheet
在庫數 3000
- 1+: $8.03503
- 10+: $7.58022
- 100+: $7.15115
- 500+: $6.74637
- 1000+: $6.36450
小計金額 $8.03503
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time:20 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Number of Pins:8
- Weight:248.52072mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:24A Ta 162A Tc
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):3.2W Ta 156W Tc
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:Dual Cool™, PowerTrench®
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):260
- Reach Compliance Code:not_compliant
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-30 Code:S-PDSO-N3
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:2.95m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:7835pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:111nC @ 10V
- Drain to Source Voltage (Vdss):100V
- Vgs (Max):±20V
- Continuous Drain Current (ID):162A
- Drain-source On Resistance-Max:0.00295Ohm
- DS Breakdown Voltage-Min:100V
- Avalanche Energy Rating (Eas):1536 mJ
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 3000
- 1+: $8.03503
- 10+: $7.58022
- 100+: $7.15115
- 500+: $6.74637
- 1000+: $6.36450
小計金額 $8.03503
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