STD5NM50T4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 500V 7.5A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 1067

1+： $2.57436
10+： $2.42864
100+： $2.29117
500+： $2.16148
1000+： $2.03914

小計金額 $2.57436

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：100W Tc
Operating Temperature：-55°C~150°C TJ
Packaging：Cut Tape (CT)
Series：MDmesh™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：800mOhm
Terminal Finish：Matte Tin (Sn)
Additional Feature：AVALANCHE RATED
Voltage - Rated DC：500V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：7.5A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD5N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：100W
Turn On Delay Time：16 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：800m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：415pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Rise Time：8ns
Vgs (Max)：±30V
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：7.5A
Threshold Voltage：4V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：5A
Drain to Source Breakdown Voltage：500V
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1067

1+： $2.57436
10+： $2.42864
100+： $2.29117
500+： $2.16148
1000+： $2.03914

小計金額 $2.57436

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STD5NM50T4