FQD7P06TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET P-CH 60V 5.4A DPAK
Date Sheet

在庫數 2187

1+： $1.09471
10+： $1.03275
100+： $0.97429
500+： $0.91914
1000+： $0.86711

小計金額 $1.09471

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Power Dissipation (Max)：2.5W Ta 28W Tc
Turn Off Delay Time：7.5 ns
Current - Continuous Drain (Id) @ 25℃：5.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Packaging：Tape & Reel (TR)
Series：QFET®
Operating Temperature：-55°C~150°C TJ
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：450mOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-60V
Terminal Form：GULL WING
Current Rating：-5.4A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：7 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：451m Ω @ 2.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds：295pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：8.2nC @ 10V
Rise Time：50ns
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±25V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：5.4A
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：-60V
Avalanche Energy Rating (Eas)：90 mJ
Height：2.39mm
Length：6.73mm
Width：6.22mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2187

1+： $1.09471
10+： $1.03275
100+： $0.97429
500+： $0.91914
1000+： $0.86711

小計金額 $1.09471

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