FQPF9N25

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 250V 6.7A TO-220F
Date Sheet

在庫數 68456

1+： $0.68509
10+： $0.64631
100+： $0.60973
500+： $0.57522
1000+： $0.54266

小計金額 $0.68509

仕様よくある質問

Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：6.7A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：45W Tc
Turn Off Delay Time：25 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2000
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Voltage - Rated DC：250V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：6.7A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：45W
Case Connection：ISOLATED
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：420m Ω @ 3.35A, 10V
Input Capacitance (Ciss) (Max) @ Vds：700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Rise Time：105ns
Vgs (Max)：±30V
Fall Time (Typ)：45 ns
Continuous Drain Current (ID)：6.7A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：8.8A
Drain-source On Resistance-Max：0.43Ohm
Drain to Source Breakdown Voltage：250V
Pulsed Drain Current-Max (IDM)：35.2A
Avalanche Energy Rating (Eas)：285 mJ
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 68456

1+： $0.68509
10+： $0.64631
100+： $0.60973
500+： $0.57522
1000+： $0.54266

小計金額 $0.68509

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FQPF9N25