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NDT014
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-261-4, TO-261AA
- Trans MOSFET N-CH 60V 2.7A 4-Pin(3 Tab) SOT-223 T/R
Date Sheet
在庫數 4000
- 1+: $1.24482
- 10+: $1.17436
- 100+: $1.10789
- 500+: $1.04518
- 1000+: $0.98602
小計金額 $1.24482
仕様 よくある質問
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-261-4, TO-261AA
- Number of Pins:3
- Weight:188mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:2.7A Ta
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):3W Ta
- Turn Off Delay Time:10 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:-65°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:1998
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:4
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:200mOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:60V
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Current Rating:2.7A
- JESD-30 Code:R-PDSO-G4
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:3W
- Case Connection:DRAIN
- Turn On Delay Time:10 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:200m Ω @ 1.6A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:155pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
- Rise Time:64ns
- Vgs (Max):±20V
- Fall Time (Typ):10 ns
- Continuous Drain Current (ID):2.7A
- Threshold Voltage:3V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:60V
- Dual Supply Voltage:60V
- Nominal Vgs:3 V
- Height:1.7mm
- Length:6.7mm
- Width:3.7mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 4000
- 1+: $1.24482
- 10+: $1.17436
- 100+: $1.10789
- 500+: $1.04518
- 1000+: $0.98602
小計金額 $1.24482
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