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STD7N80K5
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 800V 6A DPAK
Date Sheet
在庫數 775896
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：17 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins：3
- Transistor Element Material：SILICON
- Turn Off Delay Time：23.7 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 100μA
- Power Dissipation (Max)：110W Tc
- Number of Elements：1
- Current - Continuous Drain (Id) @ 25℃：6A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Packaging：Tape & Reel (TR)
- Operating Temperature：-55°C~150°C TJ
- Series：SuperMESH5™
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Resistance：1.2Ohm
- Terminal Form：GULL WING
- Base Part Number：STD7
- JESD-30 Code：R-PSSO-G2
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：110W
- Case Connection：DRAIN
- Turn On Delay Time：11.3 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：1.2 Ω @ 3A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：360pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs：13.4nC @ 10V
- Rise Time：8.3ns
- Drain to Source Voltage (Vdss)：800V
- Vgs (Max)：±30V
- Fall Time (Typ)：20.2 ns
- Continuous Drain Current (ID)：6A
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：6A
- Pulsed Drain Current-Max (IDM)：24A
- DS Breakdown Voltage-Min：800V
- Avalanche Energy Rating (Eas)：88 mJ
- Width：6.2mm
- Height：2.4mm
- Length：6.6mm
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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